1 transistor 2sc3940, 2sC3940A silicon npn epitaxial planer type for low-frequency output amplification and driver amplification complementary to 2sa1534 and 2sa1534a n features l low collector to emitter saturation voltage v ce(sat) . l allowing supply with the radial taping. n absolute maximum ratings (ta=25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings 30 60 25 50 5 1.5 1 1 150 C55 ~ +150 unit v v v a a w ?c ?c 2sc3940 2sC3940A 2sc3940 2sC3940A n electrical characteristics (ta=25?c) parameter collector cutoff current collector to base voltage collector to emitter voltage emitter to base voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency collector output capacitance symbol i cbo v cbo v ceo v ebo h fe1 *1 h fe2 v ce(sat) v be(sat) f t c ob conditions v cb = 20v, i e = 0 i c = 10 m a, i e = 0 i c = 2ma, i b = 0 i e = 10 m a, i c = 0 v ce = 10v, i c = 500ma *2 v ce = 5v, i b = 1a *2 i c = 500ma, i b = 50ma *2 i b = 500ma, i a = 50ma *2 v cb = 10v, i e = C50ma, f = 200mhz v cb = 10v, i e = 0, f = 1mhz min 30 60 25 50 5 85 50 typ 0.2 0.85 200 11 max 0.1 340 0.4 1.2 20 unit m a v v v v v mhz pf unit: mm 1:emitter 2:collector 3:base toC92nl package 5.0 0.2 13.5 0.5 0.7 0.2 8.0 0.2 1.27 123 1.27 4.0 0.2 0.45 +0.15 ?.1 0.45 +0.15 ?.1 2.3 0.2 0.7 0.1 2.54 0.15 2sc3940 2sC3940A 2sc3940 2sC3940A *1 h fe1 rank classification rank q r s h fe1 85 ~ 170 120 ~ 240 170 ~ 340 *2 pulse measurement
2 transistor 2sc3940, 2sC3940A p c ta i c v ce i c i b v ce(sat) i c v be(sat) i c h fe i c f t i e c ob v cb v cer r be 0 160 40 120 80 140 20 100 60 0 1.2 1.0 0.8 0.6 0.4 0.2 ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 010 8 26 4 0 1.5 1.25 1.0 0.75 0.5 0.25 i b =10ma 9ma 8ma 7ma 6ma 5ma 4ma 3ma 2ma 1ma ta=25?c collector to emitter voltage v ce ( v ) collector current i c ( a ) 012 10 8 26 4 0 1.2 1.0 0.8 0.6 0.4 0.2 v ce =10v ta=25?c base current i b ( ma ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 i c /i b =10 ta=75?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =10 ta=?5?c 25?c 75?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) 0.01 0.1 1 10 0.03 0.3 3 0 600 500 400 300 200 100 v ce =10v ta=75?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ? ? ?0 ?0 ?00 0 200 160 120 80 40 v cb =10v ta=25?c emitter current i e ( ma ) transition frequency f t ( mhz ) 1 3 10 30 100 0 50 40 30 20 10 i e =0 f=1mhz ta=25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0.1 1 10 100 0.3 3 30 0 120 100 80 60 40 20 i c =10ma ta=25?c 2sC3940A 2sc3940 base to emitter resistance r be ( k w ) collector to emitter voltage v cer ( v )
3 transistor 2sc3940, 2sC3940A i ceo ta area of safe operation (aso) 0 160 40 120 80 140 20 100 60 1 10 10 2 10 3 10 4 v ce =10v ambient temperature ta ( ?c ) i ceo ( ta ) i ceo ( ta=25?c ) 0.1 1 10 100 0.3 3 30 0.001 0.003 0.01 0.03 0.1 0.3 1 3 10 single pulse ta=25?c t=10ms 2sC3940A 2sc3940 t=1s i cp i c collector to emitter voltage v ce ( v ) collector current i c ( a )
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